Description
⚡ Elevate your semiconductor game with precision-engineered prime-grade wafers!
- READY TO USE PACKAGING - Includes gel membrane boxes or wafer carriers for secure handling and contamination-free storage—because your innovation deserves the best.
- ULTRA PRECISE FLATNESS - Total Indicator Reading (TIR) under 3 microns ensures unmatched wafer uniformity for flawless device fabrication.
- CONSISTENT THICKNESS CONTROL - 525 µm ± 20 µm thickness guarantees reliable layering and integration in high-tech semiconductor processes.
- PRIME GRADE CZ VIRGIN SILICON - Premium quality virgin silicon with boron doping and 1-30 Ω resistivity tailored for cutting-edge research and production.
- ATOMIC LEVEL SURFACE SMOOTHNESS - Surface roughness below 0.5 nm delivers pristine interfaces critical for next-gen microelectronics.
These 4-inch prime-grade CZ virgin silicon wafers feature a 525 µm thickness with ±20 µm tolerance, boron doping (P-type) with 1-30 Ω resistivity, and ultra-flat surfaces (TIR < 3 μm, roughness < 0.5 nm). Both sides have thermal oxide layers, with front side polished and back side etched, making them ideal for advanced semiconductor and nanotech applications. Packaged securely in gel membrane boxes or wafer carriers, they ensure contamination-free handling for professional lab and industrial use.
